Charge-collection characteristics of low-power ultrahigh speed, metamorphic AlSb/InAs high-electron mobility transistors (HEMTs)

Author

McMorrow, Dale ; Boos, J. Brad ; Knudson, Alvin R. ; Buchner, Stephen ; Yang, Ming-Jey ; Bennett, Brian R. ; Melinger, Joseph S.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

47

Issue

6

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

2662

Lastpage

2668

Abstract

Time-resolved charge-collection measurements are performed on AlSb/InAs HEMTs with pulsed laser excitation as a function of device bias conditions and the incident laser pulse energy. The results provide clear evidence for the presence of charge-enhancement processes that, in many ways, are analogous to those observed previously for GaAs FET technology

Keywords

III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; laser beam effects; low-power electronics; semiconductor device measurement; time resolved spectroscopy; AlSb-InAs; III-V semiconductors; charge-collection characteristics; charge-enhancement processes; device bias conditions; high-electron mobility transistors; incident laser pulse energy; low-power ultrahigh speed devices; pulsed laser excitation; time-resolved measurements; Current measurement; Energy measurement; FETs; Gallium arsenide; HEMTs; Laser excitation; MODFETs; Optical pulses; Performance evaluation; Pulse measurements;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.903823

Filename

903823