• DocumentCode
    1443447
  • Title

    Compact Modeling of Variation in FinFET SRAM Cells

  • Author

    Lu, Darsen D. ; Lin, Chung-Hsun ; Niknejad, Ali M. ; Hu, Chenming

  • Author_Institution
    Univ. of California, Berkeley, CA, USA
  • Volume
    27
  • Issue
    2
  • fYear
    2010
  • Firstpage
    44
  • Lastpage
    50
  • Abstract
    FinFET technology is a possible solution to achieve a better power/performance trade-off for SRAM cells. This article provides a comprehensive analysis of the variations in FinFET devices, their impact on SRAM stability, and a statistical design procedure for FinFET SRAM cells.
  • Keywords
    MOSFET; SRAM chips; statistical analysis; FinFET SRAM cells; FinFET devices; compact modeling; statistical design procedure; CMOS technology; Circuit simulation; Doping; FinFETs; Fluctuations; Random access memory; Resource description framework; Semiconductor device modeling; Stability; Threshold voltage; FinFET; SRAM; compact modeling; design and test; design for manufacturing; multigate MOSFETs; variability;
  • fLanguage
    English
  • Journal_Title
    Design & Test of Computers, IEEE
  • Publisher
    ieee
  • ISSN
    0740-7475
  • Type

    jour

  • DOI
    10.1109/MDT.2010.39
  • Filename
    5432322
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1443447