DocumentCode :
1443721
Title :
1.3- 
m Mode-Locked Disk Laser With Wafer Fused Gain and SESAM Structures
Author :
Rautiainen, Jussi ; Lyytikäinen, Jari ; Toikkanen, Lauri ; Nikkinen, Jari ; Sirbu, Alexei ; Mereuta, Alexandru ; Caliman, Andrei ; Kapon, Eli ; Okhotnikov, Oleg G.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
Volume :
22
Issue :
11
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
748
Lastpage :
750
Abstract :
We report 1.3-μm mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localized wafer fusion. An intracavity wedged diamond heat spreader capillary bonded to the gain chip prevents the disruption of 6.4-ps pulse spectrum and supports 100 mW of average power. The results reveal an advantage of wafer fusion process of disparate materials over monolithically grown InP-based gain/absorber structures and demonstrate practical potential of the technique for long-wavelength SDLs.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium arsenide; indium compounds; laser mirrors; laser mode locking; optical pumping; semiconductor lasers; AlGaAs-GaAs; InP; SESAM; distributed Bragg reflectors; intracavity wedged diamond heat spreader; mode-locked optically pumped semiconductor disk laser; power 100 mW; semiconductor saturable absorber mirror; wafer fused gain; wafer fusion; wavelength 1.3 mum; Mode-locked lasers; optical pumping; quantum-well (QW) lasers; semiconductor lasers; surface-emitting lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2045494
Filename :
5432962
Link To Document :
