Hot hole stress induced leakage current (SILC) transient in tunnel oxides

Author

Wang, Tahui ; Zous, Nian-Kai ; Lai, Jia-Long ; Huang, Chimoon

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

19

Issue

11

fYear

1998

Firstpage

411

Lastpage

413

Abstract

The mechanisms and transient characteristics of hot hole stress induced leakage current (SILC) in tunnel oxides are investigated. Positive oxide charge assisted tunneling is found to be a dominant SILC mechanism in a hot hole stressed device. The SILC transient is attributed to oxide hole detrapping and thus annihilation of positive charge assisted tunneling centers. Our characterization shows that the leakage current transient in a 100-/spl Aring/ oxide obeys a power law time dependence f/sup -n/ with the power factor n significantly less than one. An analytical model accounting for the observed time dependence is proposed.

Keywords

MOSFET; hot carriers; leakage currents; semiconductor device measurement; semiconductor device models; semiconductor device reliability; transients; tunnelling; 100 angstrom; MOSFET; analytical model; hot hole stress induced leakage current transient; oxide hole detrapping; positive charge assisted tunneling center annihilation; positive oxide charge assisted tunneling; power factor; power law time dependence; reliability; transient characteristics; tunnel oxides; Area measurement; Charge measurement; Current measurement; EPROM; Hot carriers; Leakage current; MOSFET circuits; Stress measurement; Thermal stresses; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.728896

Filename

728896