LDMOS Transistor High-Frequency Performance Enhancements by Strain

Author

Chen, Kun-Ming ; Huang, Guo-Wei ; Chen, Bo-Yuan ; Chiu, Chia-Sung ; Hsiao, Chih-Hua ; Liao, Wen-Shiang ; Chen, Ming-Yi ; Yang, Yu-Chi ; Wang, Kai-Li ; Liu, Chee Wee

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

Volume

33

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

471

Lastpage

473

Abstract

The effects of mechanical stress on the dc and high-frequency performances of laterally diffused MOS (LDMOS) transistors with different layout structures were investigated by using the wafer bending method. A 3.1% peak cutoff frequency (fT) enhancement is achieved for the multifinger device under 0.051% biaxial tensile strain. For LDMOS with annular layout, the fT enhancement is increased to 3.7% due to the various channel directions. Our results suggest the strain technology can be adopted in LDMOS for RF applications. The transconductance and gate capacitance were also extracted to clearly demonstrate the fT variations.

Keywords

MOSFET; bending; stress effects; stress-strain relations; LDMOS transistor; annular layout; biaxial tensile strain; gate capacitance; high-frequency performance enhancements; laterally diffused MOS transistors; layout structures; mechanical stress effect; multifinger device; peak cutoff frequency enhancement; strain technology; transconductance; wafer bending method; Layout; Logic gates; Performance evaluation; Radio frequency; Silicon; Strain; Transistors; Annular layout; biaxial tensile strain; cutoff frequency; laterally diffused MOS (LDMOS); mechanical stress;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2182494

Filename

6148255