Title :
A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices
Author :
Lu, Yang ; Gao, Bin ; Fu, Yihan ; Chen, Bing ; Liu, Lifeng ; Liu, Xiaoyan ; Kang, Jinfeng
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
3/1/2012 12:00:00 AM
Abstract :
A physical-based simplified model is presented to quantify the resistive switching behavior of oxide-based resistive random access memory (RRAM). In this model, the analytical expressions of the RESET time of RRAM devices and the correlated resistance in high-resistance states are presented and experimentally verified. Based on the extracted physical-based model parameters from measured data, the resistive switching characteristics of oxide-based RRAM devices can be evaluated.
Keywords :
random-access storage; RESET time; oxide-based RRAM device; oxide-based resistive random access memory device; physical-based model parameter extraction; physical-based simplified model; resistive switching behavior; Data models; Force; Hafnium compounds; Predictive models; Resistance; Spontaneous emission; Switches; Conductive filament (CF); RESET time; hafnium oxide; nonvolatile memory; resistive random access memory (RRAM); resistive switching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2178229
