Fabrication of low dielectric constant materials for ULSI multilevel interconnection by plasma ion implantation

Author

Qin, Shu ; Zhou, Yuanzhong ; Chan, Chung ; Chu, Paul K.

Author_Institution

Silicon Genesis Corp., Bedford, MA, USA

Volume

19

Issue

11

fYear

1998

Firstpage

420

Lastpage

422

Abstract

High dose-rate plasma ion implantation (PII) has been utilized to produce low dielectric constant (k) SiO/sub 2/ films for high quality interlayer dielectrics. The SiO/sub 2/ films are fluorine-doped/carbon-doped by PII with CF/sub 4/ plasma in an inductively-coupled plasma (ICP) reactor. It is found that the use of CF/sub 4/ doping results in exceptional dielectric properties which differ significantly from fluorinated SiO/sub 2/. The dielectric constant of the SiO/sub 2/ film is reduced from 4.1 to 3.5 after 5 minute PII, other electrical parameters such as bulk resistivity and dielectric breakdown strength are also improved.

Keywords

ULSI; dielectric thin films; electric breakdown; electrical resistivity; integrated circuit interconnections; ion implantation; permittivity; plasma materials processing; secondary ion mass spectra; silicon compounds; 5 min; CF/sub 4/ plasma; SIMS profiles; Si; SiO/sub 2/:F,C; SiO/sub 2/:F,C films; ULSI multilevel interconnection; bulk resistivity; dielectric breakdown strength; inductively-coupled plasma reactor; interlayer dielectrics; low dielectric constant materials; low k SiO/sub 2/ films; plasma ion implantation; tetrafluoromethane; Dielectric constant; Dielectric materials; Doping; Fabrication; Inductors; Ion implantation; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.728899

Filename

728899