• DocumentCode
    1443807
  • Title

    Three-Dimensional Solenoids Realized via High-Density Deep Coil Stacking for MEMS Application

  • Author

    Li, H.Y. ; Xie, L. ; Ong, L.G. ; Baram, A. ; Herer, I. ; Hirshberg, A. ; Chong, S.C. ; Gao, S. ; Kwong, D.L.

  • Author_Institution
    Inst. of Microelectron., Agency for Sci., Technol. & Res., A*STAR, Singapore, Singapore
  • Volume
    33
  • Issue
    3
  • fYear
    2012
  • fDate
    3/1/2012 12:00:00 AM
  • Firstpage
    432
  • Lastpage
    434
  • Abstract
    Three-dimensional solenoids have been developed and demonstrated for the first time in stacking of through-silicon via chips. High-density microcoils (width, space, and depth with 24 turns) were completely filled with Cu. Eight high-density microcoil chips were stacked using a conductive adhesive. The inductance of the eight stacked high-density microcoil chips is measured to be at 0.9 MHz, and the maximum magnetic field reaches to 0.67 mT, as characterized by a magnetic field detector 2 mm above the cavity center of the coils. The eight stacked high-density microcoil chips achieved 66-h operation under continuous current (0.2 A) stress testing without failure. Two microcoil chips stacked using solder also completed 1000 thermal cycles (to 125) successfully with merely 3.7% resistance change.
  • Keywords
    conductive adhesives; copper; micromechanical devices; solenoids; 3D solenoids; Cu; MEMS application; conductive adhesive; figh-density microcoils; high-density deep coil stacking; magnetic field detector; stress testing; through-silicon via chips; time 66 h; Coils; Copper; Magnetomechanical effects; Saturation magnetization; Silicon; Solenoids; Stacking; 3-D solenoids; Inductance; magnetic field; reliability; through-silicon via (TSV) technology;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2182601
  • Filename
    6148257