DocumentCode
1443807
Title
Three-Dimensional Solenoids Realized via High-Density Deep Coil Stacking for MEMS Application
Author
Li, H.Y. ; Xie, L. ; Ong, L.G. ; Baram, A. ; Herer, I. ; Hirshberg, A. ; Chong, S.C. ; Gao, S. ; Kwong, D.L.
Author_Institution
Inst. of Microelectron., Agency for Sci., Technol. & Res., A*STAR, Singapore, Singapore
Volume
33
Issue
3
fYear
2012
fDate
3/1/2012 12:00:00 AM
Firstpage
432
Lastpage
434
Abstract
Three-dimensional solenoids have been developed and demonstrated for the first time in stacking of through-silicon via chips. High-density microcoils (width, space, and depth with 24 turns) were completely filled with Cu. Eight high-density microcoil chips were stacked using a conductive adhesive. The inductance of the eight stacked high-density microcoil chips is measured to be at 0.9 MHz, and the maximum magnetic field reaches to 0.67 mT, as characterized by a magnetic field detector 2 mm above the cavity center of the coils. The eight stacked high-density microcoil chips achieved 66-h operation under continuous current (0.2 A) stress testing without failure. Two microcoil chips stacked using solder also completed 1000 thermal cycles (to 125) successfully with merely 3.7% resistance change.
Keywords
conductive adhesives; copper; micromechanical devices; solenoids; 3D solenoids; Cu; MEMS application; conductive adhesive; figh-density microcoils; high-density deep coil stacking; magnetic field detector; stress testing; through-silicon via chips; time 66 h; Coils; Copper; Magnetomechanical effects; Saturation magnetization; Silicon; Solenoids; Stacking; 3-D solenoids; Inductance; magnetic field; reliability; through-silicon via (TSV) technology;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2182601
Filename
6148257
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