The effect of native oxide on thin gate oxide integrity

Author

Chin, Albert ; Lin, B.C. ; Chen, W.J. ; Lin, Y.B. ; Tsai, C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

19

Issue

11

fYear

1998

Firstpage

426

Lastpage

428

Abstract

We have studied the effect of native oxide on thin gate oxide integrity. Much improved leakage current of gate oxide can be obtained by in situ desorbing the native oxide using HF-vapor treated and H/sub 2/ baked processes. Furthermore, an extremely sharp interface between oxide and Si is obtained, and good oxide reliability is achieved even under a high current density stress of 11 A/cm/sup 2/ and a large charge injection of 7.9/spl times/10/sup 4/ C/cm/sup 2/. The presence of native oxide will increase the interface roughness, gate oxide leakage current and stress-induced hole traps.

Keywords

MOS capacitors; atomic force microscopy; current density; hole traps; interface roughness; leakage currents; oxidation; semiconductor device measurement; semiconductor device reliability; semiconductor diodes; surface treatment; transmission electron microscopy; AFM images; CMOS devices; H/sub 2/; H/sub 2/ baking; HF; HF-vapor treatment; MOS capacitors; MOS diodes; Si; Si-SiO/sub 2/; TEM images; charge injection; gate oxide leakage current; high current density stress; in situ desorption; interface roughness; leakage current; native oxide effect; oxide reliability; sharp interface; stress-induced hole traps; thin gate oxide integrity; Cleaning; Current density; Furnaces; Lattices; Leakage current; Rough surfaces; Stress; Surface roughness; Surface treatment; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.728901

Filename

728901