Title :
Investigation of State Stability of Low-Resistance State in Resistive Memory
Author :
Park, Jubong ; Jo, Minseok ; Bourim, El Mostafa ; Yoon, Jaesik ; Seong, Dong-jun ; Lee, Joonmyoung ; Lee, Wootae ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
fDate :
5/1/2010 12:00:00 AM
Abstract :
We investigated the state stability of the low-resistance state (LRS) in a resistive switching memory having a Pt/Cu:MoOx/GdOx/Pt structure. Various resistance values of LRS were accurately controlled using an external load resistor connected in series with the resistive memory device. We found that the retention time decreased with an increase in the resistance of LRS. We performed accelerating tests for resistance transition from a low- to a high-resistance state under temperatures ranging from 200??C to 250??C. A predicted resistance of LRS for a ten-year retention period at 85??C was determined based on the Arrhenius law.
Keywords :
copper; gadolinium compounds; molybdenum compounds; platinum; resistors; semiconductor storage; stability; Arrhenius law; Pt-Cu-MoOx-GdOx-Pt; external load resistor; low resistance state; predicted resistance; resistive memory; resistive switching memory; state stability; temperature 200 C to 250 C; temperature 85 C; Resistance random access memory (ReRAM); resistive memory; retention;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2042677
