Title :
Thermal Noise in MOSFETs: A Two- or a Three-Parameter Noise Model?
Author :
Emam, Mostafa ; Sakalas, Paulius ; Vanhoenacker-Janvier, Danielle ; Raskin, Jean-Pierre ; Lim, Tao Chuan ; Danneville, François
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Louvain-La-Neuve, Belgium
fDate :
5/1/2010 12:00:00 AM
Abstract :
In this brief, it is clearly demonstrated that a two-parameter noise model is sufficient to accurately extract the MOSFET high-frequency noise performance, as long as channel uniformity is ensured (which corresponds to mainstream CMOS technology). Nevertheless, in the case of asymmetric channel-based MOSFETs, it is shown that a three-parameter noise model is required.
Keywords :
MOSFET; thermal noise; asymmetric channel-based MOSFET; thermal noise; three-parameter noise model; two-parameter noise model; CMOS technology; FETs; HEMTs; Laboratories; MODFETs; MOSFETs; Semiconductor device modeling; Semiconductor device noise; Silicon on insulator technology; Voltage; Graded-channel MOS (GCMOS); mainstream MOSFETs; modeling; noise correlation coefficient; silicon on insulator (SOI); thermal noise;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2044286
