DocumentCode :
1444067
Title :
Modeling of the Output and Transfer Characteristics of Graphene Field-Effect Transistors
Author :
Scott, Brett W. ; Leburton, Jean-Pierre
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Champaign, IL, USA
Volume :
10
Issue :
5
fYear :
2011
Firstpage :
1113
Lastpage :
1119
Abstract :
We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed expressions for the conductance, transconductance, and saturation voltage are derived. We found good agreement with the experimental data of Meric et al. [Nat. Nanotechnol. vol. 3, p. 684, 2008] without assuming carrier density-dependent velocity saturation.
Keywords :
Boltzmann equation; electric admittance; field effect transistors; graphene; Boltzmann equation; C; charge-control model; field-dependent relaxation time approximation; graphene field-effect transistors; saturation voltage; transconductance; transfer characteristics; Logic gates; Materials; Mathematical model; Resistance; Scattering; Threshold voltage; Transistors; Graphene; high field effect; saturation velocity; simulation; transistors;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2011.2112375
Filename :
5709989
Link To Document :
بازگشت