Title :
A Single-Chip 125-MHz to 32-GHz Signal Source in 0.18-
m SiGe BiCMOS
Author :
Yu, Shih-An ; Baeyens, Yves ; Weiner, Joseph ; Koc, Ut-Va ; Rambaud, Marta ; Liao, Fang-Ren ; Chen, Young-Kai ; Kinget, Peter R.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
3/1/2011 12:00:00 AM
Abstract :
We present a 4.4-mm2 single-chip synthesized signal source with 125 MHz to 32 GHz continuous frequency coverage with a minimum frequency step smaller than 10 Hz. The chip is fabricated in a 0.18-μm SiGe BiCMOS 1P6M technology. A core fractional-N synthesizer using a 20-MHz reference frequency has four LC-VCOs and a 4- to 8-GHz synthesizable range. Post-synthesis blocks extend the frequency coverage up to 32 GHz and down to 125 MHz through frequency multiplication and division. In different operation modes, the chip, including a balanced 50-ohm load driver, consumes from 284 to 498 mW. The phase noise performance achieves -117.6 dBc/Hz at 1-MHz offset from a 6-GHz output frequency and -83 dBc/Hz in-band noise. The integrated phase noise is -28 dBc and the absolute jitter is 1.05 psRMS at 6-GHz output. The jitter is maintained nearly constant (between 0.9 and 1.2 psRMS) across the whole output frequency range.
Keywords :
BiCMOS digital integrated circuits; Ge-Si alloys; jitter; oscillators; phase noise; voltage-controlled oscillators; 0.18-μm SiGe BiCMOS 1P6M technology; SiGe; core fractional-N synthesizer; frequency 1 MHz to 8 GHz; phase noise performance; power 284 mW to 498 mW; signal source; single-chip; Frequency conversion; Frequency synthesizers; Phase locked loops; Phase noise; Q factor; Synthesizers; Fractional-N; frequency synthesizer; mm-wave; software-defined radio; ultra wideband; voltage-controlled oscillator;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2011.2104551