Title :
Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors
Author :
Jiao, G.F. ; Chen, Z.X. ; Yu, H.Y. ; Huang, X.Y. ; Huang, D.M. ; Singh, N. ; Lo, G.Q. ; Kwong, D.-L. ; Li, Ming-Fu
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
fDate :
5/1/2010 12:00:00 AM
Abstract :
We report, for the first time, the reliability issues of tunneling field-effect transistors (TFETs) by experiments. We observed that the overall reliability performance of n-TFETs is very different from those of the conventional n-MOSFET. The degradation of n-TFETs under positive bias temperature instability (PBTI) stress is very large compared with the negligible degradation for the conventional n-MOSFET. The degradation of n-TFETs under hot-carrier stress is also larger than that in the conventional n-MOSFET and has a different temperature dependence. The shifts of the I d- V g curves under PBTI stress are not parallel in the strong inversion region as in the case of the conventional n-MOSFET. The different degradation behaviors are explained by different degradation mechanisms due to some inherent properties of TFETs.
Keywords :
MOSFET; field effect transistors; hot carriers; semiconductor device reliability; temperature; thermal stresses; tunnel transistors; PBTI stress; degradation behavior; hot-carrier stress; n-MOSFET; n-TFET; positive bias temperature instability stress; reliability performance; temperature dependence; tunneling field-effect transistor; Bias temperature instability (BTI); CMOS transistors; hot-carrier effect (HCE); reliability; tunneling field-effect transistor (TFET);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2042923
