Title :
Fabrication and Characterization of Low-Temperature Poly-Silicon Lateral p-i-n Diode
Author :
Kim, Se Hwan ; Lee, Seung Hoon ; Jang, Jin
Author_Institution :
Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
fDate :
5/1/2010 12:00:00 AM
Abstract :
We have studied a lateral p-i-n photodiode made of excimer-laser-annealed poly-Si on glass. The diode quality factor, activation energy of diode currents at -3 V, and built-in potential were found to be 1.6, 0.5 eV, and 0.89 eV, respectively, which were achieved from temperature-dependent current-voltage characteristics. The 50-nm-thick p-i-n diode shows a high rectification ratio of > 107 at ??1 V and a relatively high photoresponse at 500 lx. PACS: 81.05.Gc; 62.20.-x; 07.10.Lw; 07.10.Pz.
Keywords :
excimer lasers; p-i-n photodiodes; current-voltage characteristics; diode quality factor; excimer laser-annealed poly-silicon; lateral p-i-n photodiode; low temperature poly-silicon lateral p-i-n diode; voltage -3 V; Diode quality factor; lateral p-i-n diode; saturation current density;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2043047
