Title :
A Simulation Study of the Punch-Through-Assisted Hot Hole Injection Mechanism for Nonvolatile Memory Cells
Author :
Iellina, Matteo ; Palestri, Pierpaolo ; Akil, Nader ; Van Duuren, Michiel J. ; Driussi, Francesco ; Esseni, David ; Selmi, Luca
Author_Institution :
Dipt. di Ing. Elettr., Gestionale e Meccanica, Univ. of Udine, Udine, Italy
fDate :
5/1/2010 12:00:00 AM
Abstract :
In this paper, we investigate the operating principle and the injection efficiency of the punch-through-assisted hot hole injection mechanism for programming nonvolatile memory cells by means of full-band Monte Carlo transport simulations of realistic device structures. The effects of terminal bias and cell scaling on the injection efficiency and the uniformity of charge injection along the channel are analyzed in detail.
Keywords :
Monte Carlo methods; random-access storage; cell scaling; charge injection; full-band Monte Carlo transport simulations; programming nonvolatile memory cells; punch-through-assisted hot hole injection mechanism; terminal bias; Educational institutions; Electrons; Hot carriers; Monte Carlo methods; Nonvolatile memory; SONOS devices; Silicon compounds; Smart cards; Tunneling; Voltage; Hot carrier injection; Monte Carlo; nonvolatile memory; silicon-nitride;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2043396
