• DocumentCode
    1444540
  • Title

    A 3D thermal simulation tool for integrated devices-Atar

  • Author

    Smy, T. ; Walkey, D. ; Dew, S.K.

  • Author_Institution
    Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
  • Volume
    20
  • Issue
    1
  • fYear
    2001
  • fDate
    1/1/2001 12:00:00 AM
  • Firstpage
    105
  • Lastpage
    115
  • Abstract
    This paper presents a novel three-dimensional (3D) thermal simulation tool for semiconductor integrated devices. The simulator is used to automatically generate an accurate 3D physical model of the device to be simulated from layout information. The simulator produces an appropriate mesh of the device based on a rectangular block structure. The mesh is automatically created such that a fine mesh is produced around heat generation regions, but a moderate number of blocks are used for the entire device. This paper first confirms that the simulator produces an accurate solution to the nonlinear differential equation describing the heat flow. Then model generation from three example technologies (silicon trench, GaAs mesa structures, silicon on insulator) is presented. The potential of the simulator to quickly and easily explore the effect of layout and process variations is illustrated, with the simulation of a two-transistor GaAs power cell as a large example. The program incorporates a transient solver based on a transmission line matrix (TLM) implementation using a physical extraction of a resistance and capacitance network. The formulation allows for temperature dependent material parameters and a nonuniform time stepping. An example of a full transient solution of heat flow in a realistic Si trench device is presented
  • Keywords
    circuit simulation; digital simulation; integrated circuit layout; integrated circuit modelling; integrated circuit reliability; nonlinear differential equations; silicon-on-insulator; thermal resistance; transient analysis; 3D thermal simulation tool; Atar; SOI; fine mesh; heat generation regions; layout information; mesa structures; nonlinear differential equation; nonuniform time stepping; physical model; power cell; process variations; rectangular block structure; temperature dependent material parameters; transient solution; transient solver; transmission line matrix; trench; Capacitance; Gallium arsenide; Geometry; Metallization; Power system transients; Silicon on insulator technology; Steady-state; Temperature; Thermal resistance; Transmission line matrix methods;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.905679
  • Filename
    905679