Micro-magnetic simulations on the switching of EF-controlled MTJ free layer magnetization assisted by oersted-field

We investigate the switching of electric-field (EF)-controlled magnetic tunneling junction free layer (FL) magnetization assisted by Oersted field using OOMMF (Object Oriented Micro Magnetics Framework). The effects of several physical parameters, such as damping constant, magnetic anisotropy, as well as the EF efficiency and the applied Oersted field on the switching of the free layer magnetization are examined. The results show that besides the damping constant, the EF efficiency and the applied Oersted field are also crucial parameters that may affect the switching speed. The switching time is mainly determined by the time that the easy axis of the free layer turns into in-plane due to the demagnetization field after applying EF.