Title :
RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate
Author :
Lecourt, Francois ; Ketteniss, N. ; Behmenburg, H. ; Defrance, Nicolas ; Hoel, Virginie ; Eickelkamp, M. ; Vescan, Andrei ; Giesen, C. ; Heuken, M. ; De Jaeger, J.C.
Author_Institution :
Inst. of Electron., Microelectron. & Nanotechnol., Lille Univ., Villeneuve d´Ascq, France
Abstract :
DC and RF performances of an In0.15Al0.85N/AlN/GaN high electron mobility transistor (HEMT) on sapphire substrate with 8.3 nm barrier layer thickness are reported. The device provides a maximum DC current density of 1 A/mm and a peak extrinsic transconductance of 325 mS/mm. A current gain cutoff frequency (FT) of 80 GHz and a power gain cutoff frequency (FMAX) of 130 GHz are obtained for a 110 nm gate length transistor corresponding to the highest reported values from InAlN/AlN/GaN HEMTs grown on sapphire substrate.
Keywords :
III-V semiconductors; MOCVD coatings; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; sapphire; wide band gap semiconductors; DC current density; InAlN-AlN-GaN; RF performances; barrier layer; current gain cutoff frequency; frequency 130 GHz; frequency 80 GHz; high electron mobility transistors; metalorganic chemical vapour deposition; power gain cutoff frequency; sapphire substrate; size 110 nm; size 8.3 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.7512
