Title :
Edge effect in 3-phase surface-channel charge-coupled devices
Author :
Lamb, D.R. ; Singh, M.P. ; Roberts, P.C.T.
Author_Institution :
University of Southampton, Department of Electronics, Southampton, UK
fDate :
5/1/1976 12:00:00 AM
Abstract :
An analysis of surface-state trapping loss in surface-channel c.c.d.s has been carried out. By calculating the areas under the transfer gates occupied by different sized charge packets it has been shown that the edge effect is the dominant loss mechanism and that it cannot be eliminated by the use of fat-0s. Experimental results which confirm the theoretical predictions are presented.
Keywords :
charge-coupled devices; electron traps; surface electron states; CCD; edge effect; electrode; surface channel; surface state electron; transfer gates; trapping loss;
Journal_Title :
Electrical Engineers, Proceedings of the Institution of
DOI :
10.1049/piee.1976.0088
