DocumentCode
1444866
Title
Low-power low-noise active mixers for 5.7 and 11.2 GHz using commercially available SiGe HBT MMIC technology
Author
Durr, Wolfgang ; Erben, U. ; Schuppen, A. ; Dietrich, H. ; Schumacher, H.
Author_Institution
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
Volume
34
Issue
21
fYear
1998
fDate
10/15/1998 12:00:00 AM
Firstpage
1994
Lastpage
1996
Abstract
The authors demonstrate the application of a commercially available SiGe heterojunction bipolar transistor monolithic microwave integrated circuit technology to active mixers in future communication systems at 5.7 GHz and above. This technology can be used to realise circuits with less than 50 mW power consumption, conversion gains above 15 dB and small double sideband noise figures of 3.6 and 9.4 dB for 5.7 and 11.2 GHz Gilbert cell mixer circuits, respectively
Keywords
Ge-Si alloys; MMIC mixers; bipolar MMIC; heterojunction bipolar transistors; integrated circuit noise; semiconductor materials; 11.2 GHz; 15 dB; 3.6 dB; 5.7 GHz; 50 mW; 9.4 dB; Gilbert cell mixer circuits; SHF; SiGe; SiGe HBT MMIC technology; commercially available technology; double sideband noise figures; heterojunction bipolar transistor; low-noise active mixers; low-power mixers; monolithic microwave integrated circuit;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981416
Filename
729846
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