Title :
Low-power low-noise active mixers for 5.7 and 11.2 GHz using commercially available SiGe HBT MMIC technology
Author :
Durr, Wolfgang ; Erben, U. ; Schuppen, A. ; Dietrich, H. ; Schumacher, H.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
fDate :
10/15/1998 12:00:00 AM
Abstract :
The authors demonstrate the application of a commercially available SiGe heterojunction bipolar transistor monolithic microwave integrated circuit technology to active mixers in future communication systems at 5.7 GHz and above. This technology can be used to realise circuits with less than 50 mW power consumption, conversion gains above 15 dB and small double sideband noise figures of 3.6 and 9.4 dB for 5.7 and 11.2 GHz Gilbert cell mixer circuits, respectively
Keywords :
Ge-Si alloys; MMIC mixers; bipolar MMIC; heterojunction bipolar transistors; integrated circuit noise; semiconductor materials; 11.2 GHz; 15 dB; 3.6 dB; 5.7 GHz; 50 mW; 9.4 dB; Gilbert cell mixer circuits; SHF; SiGe; SiGe HBT MMIC technology; commercially available technology; double sideband noise figures; heterojunction bipolar transistor; low-noise active mixers; low-power mixers; monolithic microwave integrated circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981416
