Title :
High temperature operation of II-IV ridge-waveguide laser diodes
Author :
Legge, M. ; Bader, S. ; Bacher, G. ; Lugauer, H.-J. ; Waag, A. ; Forchel, A. ; Landwehr, G.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
fDate :
10/15/1998 12:00:00 AM
Abstract :
Ridge-waveguide laser diodes based on beryllium chalcogenides have been realised. An extremely large temperature coefficient (T0=330 K at room temperature) allows device operation up to temperatures of 413 K. Lateral monomode emission is obtained with a ratio between the vertical and the lateral far field pattern of, for example, 1.2:1 for a stripe width of 1 μm
Keywords :
II-VI semiconductors; chalcogenide glasses; ridge waveguides; semiconductor lasers; semiconductor superlattices; zinc compounds; 1 micron; 413 K; II-IV ridge-waveguide laser diodes; ZnSe-Be0.06Zn0.94Se; device operation; lateral far field pattern; lateral monomode emission; stripe width; temperature coefficient;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981444
