DocumentCode :
1445037
Title :
Longitudinal mode grouping in InGaAs/GaAs/AlGaAs quantum dot lasers: origin and means of control
Author :
O´Reilly, E.P. ; Onischenko, A.I. ; Avrutin, E.A. ; Bhattacharyya, D. ; Marsh, John H.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford
Volume :
34
Issue :
21
fYear :
1998
fDate :
10/15/1998 12:00:00 AM
Firstpage :
2035
Lastpage :
2037
Abstract :
It is proposed that the recently observed quasi-periodic modulation of the emission spectra of quantum dot lasers is due to interference effects associated with waveguide leakage into the substrate. Such effects could be positively engineered to control laser spectra in such devices
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; light interference; optical modulation; semiconductor lasers; semiconductor quantum dots; InGaAs-GaAs-AlGaAs; emission spectra; interference effects; laser spectra control; longitudinal mode grouping; quantum dot lasers; quasi-periodic modulation; waveguide leakage;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981397
Filename :
729892
Link To Document :
بازگشت