Title :
40 Gbit/s 1.55 μm pin-HEMT photoreceiver monolithically integrated on 3 in GaAs substrate
Author :
Hurm, V. ; Benz, W. ; Bronner, W. ; Hülsmann, A. ; Jakobus, T. ; Köhler, K. ; Leven, A. ; Ludwig, M. ; Raynor, B. ; Rosenzweig, J. ; Schlechtweg, M. ; Thiede, A.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fDate :
10/15/1998 12:00:00 AM
Abstract :
A 36.5 GHz bandwidth, 1.55 μm wavelength pin-HEMT photoreceiver with a distributed amplifier has been monolithically integrated on a 3 in GaAs substrate using a 0.15 μm gate-length pseudomorphic HEMT process. The pin photodiode has a responsivity of 0.34 A/W. Clearly-opened eye diagrams for a 40 Gbit/s optical data stream have been demonstrated
Keywords :
III-V semiconductors; distributed amplifiers; gallium arsenide; high electron mobility transistors; integrated optoelectronics; optical receivers; p-i-n photodiodes; 0.15 micron; 1.55 micron; 3 in; 36.5 GHz; 40 Gbit/s; GaAs; GaAs substrate; distributed amplifier; eye diagram; monolithic integration; optical data communication; pin photodiode; pin-HEMT photoreceiver; pseudomorphic HEMT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981376
