• DocumentCode
    1445161
  • Title

    Derived distribution for electrical overstress failure thresholds of transistors

  • Author

    Wheless, W.P., Jr. ; Wurtz, L.T.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Alabama Univ., Tuscaloosa, AL, USA
  • Volume
    34
  • Issue
    21
  • fYear
    1998
  • fDate
    10/15/1998 12:00:00 AM
  • Firstpage
    2063
  • Lastpage
    2064
  • Abstract
    Electrical overstress failure may be analysed as a manifestation of plasma instabilities in semiconductors. The alternative Wunsch-Bell thermal paradigm is also useful for practical failure modelling, and is the basis for the derivation of the new probability density function presented
  • Keywords
    bipolar transistors; electrostatic discharge; failure analysis; semiconductor device models; semiconductor plasma; Wunsch-Bell thermal model; electrical overstress failure; plasma instability; probability density function; semiconductor; threshold distribution; transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981418
  • Filename
    729940
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1445161