Title :
Effect of atmosphere on reliability of passivated 0.15 μm InAlAs/InGaAs HEMTs
Author :
Dammann, Michael ; Chertouk, M. ; Jantz, W. ; Kohler, Klaus ; Schmidt, Heidemarie ; Weimann, G.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg
fDate :
10/15/1998 12:00:00 AM
Abstract :
The influence of ambient atmosphere on the long term stability of InP-based HEMTs has been investigated. By performing accelerated stress tests at elevated temperature the authors found that the electrical parameter drift is much faster in air than in nitrogen. The importance of a stabilisation bake in nitrogen after the fabrication process is demonstrated
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; life testing; passivation; semiconductor device reliability; 0.15 micron; InAlAs-InGaAs; InAlAs/InGaAs HEMT; InP; InP substrate; accelerated stress test; ambient atmosphere; electrical parameter drift; fabrication; passivation; reliability; stabilisation bake; stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981383
