• DocumentCode
    1445172
  • Title

    Low frequency noise analysis of LT-GaAs and LT-Al0.3Ga 0.7As MISFET active layers

  • Author

    Chong, T.C. ; Lau, W.S. ; Tan, Leng Seow ; Geng, C. ; Lim, Norman

  • Volume
    34
  • Issue
    21
  • fYear
    1998
  • fDate
    10/15/1998 12:00:00 AM
  • Firstpage
    2066
  • Lastpage
    2067
  • Abstract
    Noise spectroscopy has been used to assess the quality of the active layers of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices using transmission line model structures. Noise spectra were studied as a function of insulator thickness. LT-Al0.3Ga 0.7As samples and a 500 Å thick LT-GaAs sample exhibited 1/f noise. The noise parameter αlatt was found to be of the order 10-4 for these samples. 2000 Å LT-GaAs samples exhibited 1/f3/2 noise with 500 Hz corner frequency
  • Keywords
    1/f noise; III-V semiconductors; MISFET; aluminium compounds; gallium arsenide; semiconductor device models; semiconductor device noise; 1/f noise; 2000 angstrom; 500 Hz; 500 angstrom; Al0.3Ga0.7As; GaAs; MISFET active layers; active layer quality; corner frequency; insulator thickness; low frequency noise analysis; noise spectroscopy; transmission line model structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981393
  • Filename
    729946
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1445172