Title :
Proportional difference operator method and its application to studying the saturation characteristics of MOSFETs
Author :
Tan, Changhua ; Xu, Mingzhen ; Wang, Jinyan ; Xie, Bing ; He, Yandong
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
10/15/1998 12:00:00 AM
Abstract :
The proportional difference operator method is used to study the saturation characteristics of a long-channel MOSFET. The proportional difference operator has the property that the operation result for a function with saturation behaviour has a spectral nature. The most important static parameters (such as saturation current, voltage and threshold voltage) can be directly and simply determined and studied by the proportional difference operator method
Keywords :
MOSFET; carrier mobility; semiconductor device models; long-channel MOSFET; proportional difference operator method; saturation behaviour; saturation characteristics; saturation current; static parameters; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981396
