Highly Reliable Depletion-Mode a-IGZO TFT Gate Driver Circuits for High-Frequency Display Applications Under Light Illumination

Author

Kim, Binn ; Cho, Hyung Nyuck ; Choi, Woo Seok ; Kuk, Seung-Hee ; Jang, Yong Ho ; Yoo, Juhn-Suk ; Yoon, Soo Young ; Jun, Myungchul ; Hwang, Yong-Kee ; Han, Min-Koo

Author_Institution

R&D Center, LG Display, Paju, South Korea

Volume

33

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

528

Lastpage

530

Abstract

We proposed and fabricated a depletion-mode amorphous indium-gallium-zinc-oxide thin-film transistor gate driver without any additional signals. The proposed gate driver successfully exhibited a high-voltage output pulse without distortion at a clock frequency of 100 kHz, which is enough to drive a high-frequency panel with a frame rate of ~360 Hz and a resolution of full high definition. The experimental and simulation results showed that the gate driver would be highly reliable under light illumination. Also, the output waveform of the gate driver was not distorted after 240-h driving under 450-nm illumination with an intensity of 1 mW/ cm² at 60^°C.

Keywords

II-VI semiconductors; amorphous semiconductors; circuit reliability; display devices; driver circuits; gallium compounds; indium compounds; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO; depletion-mode amorphous thin-film transistor gate driver; frequency 100 kHz; high-frequency display; high-frequency panel; high-voltage output pulse; highly reliable depletion-mode TFT gate driver circuits; light illumination; temperature 60 degC; time 240 h; wavelength 450 nm; Clocks; Lighting; Logic gates; Shift registers; Stress; Thin film transistors; Amorphous indium–gallium–zinc–oxide thin-film transistor (a-IGZO TFT); depletion mode; gate driver; high frequency; light illumination;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2181969

Filename

6151011