Phase-Change Memory With Multifin Thin-Film-Transistor Driver Technology

Author

Li, Lin ; Zhang, Lining ; Lin, Xinnan ; He, Jin ; Chui, Chi On ; Chan, Mansun

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

Volume

33

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

405

Lastpage

407

Abstract

In this letter, we have demonstrated the integration of phase-change memory (PCM) with thin-film-transistor (TFT) drivers for system-on-panel applications. To overcome the low-current drive and coarse design rule in TFT technology, thermal engineering to concentrate the thermal energy is used to achieve PCM cell programming at a low programming current. In addition, TFTs with multifin structure are implemented as PCM drivers to improve the current drive. The RESET/SET resistance read window of a fabricated test array can be maintained at 60 after programming cycles and with a ten-year retention time at 390 K.

Keywords

phase change memories; thin film transistors; PCM cell programming; RESET/SET resistance read window; coarse design rule; multifin thin film transistor driver technology; phase change memory; system-on-panel; temperature 390 K; thermal engineering; time 10 year; Arrays; Phase change materials; Phase change memory; Programming; Thin film transistors; FinFET; phase-change (PC) memory (PCM); system on panel (SOP); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2181480

Filename

6151014