Title :
Variability Origins of Parasitic Resistance in FinFETs With Silicided Source/Drain
Author :
Matsukawa, Takashi ; Liu, Yongxun ; Endo, Kazuhiko ; Tsukada, Junichi ; Ishikawa, Yuki ; Yamauchi, Hiromi ; O´uchi, Shinichi ; Sakamoto, Kunihiro ; Masahara, Meishoku
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fDate :
4/1/2012 12:00:00 AM
Abstract :
Origins of parasitic resistance Rpara fluctuation were investigated by a measurement-based analysis for fin-shaped FETs (FinFETs) with NiSi in the source/drain (S/D). Fluctuation in the extension resistance Rext reflecting fin thickness Tfin fluctuation is negligible for the sufficiently small thickness of the sidewall spacer. Although the NiSi incorporation in the S/D reduces Rpara on average, it causes additional fluctuation of Rpara. Analyzing the correlation of the Rpara fluctuation with the fluctuation in Tfin and the lateral growth of NiSi, the dominant origin of the Rpara fluctuation is specified to be the NiSi/n+-Si contact resistance.
Keywords :
MOSFET; contact resistance; semiconductor device measurement; FinFET; contact resistance; extension resistance fluctuation; fin thickness fluctuation; fin-shaped FET; measurement-based analysis; parasitic resistance; sidewall spacer; silicided source-drain; variability origins; Contact resistance; Correlation; FinFETs; Logic gates; Resistance; Silicon; Fin-shaped FET (FinFET); NiSi; parasitic resistance $(R_{rm para})$; scaling; source/drain (S/D); variability;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2182755
