Variability Origins of Parasitic Resistance in FinFETs With Silicided Source/Drain

Author

Matsukawa, Takashi ; Liu, Yongxun ; Endo, Kazuhiko ; Tsukada, Junichi ; Ishikawa, Yuki ; Yamauchi, Hiromi ; O´uchi, Shinichi ; Sakamoto, Kunihiro ; Masahara, Meishoku

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

Volume

33

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

474

Lastpage

476

Abstract

Origins of parasitic resistance R_para fluctuation were investigated by a measurement-based analysis for fin-shaped FETs (FinFETs) with NiSi in the source/drain (S/D). Fluctuation in the extension resistance R_ext reflecting fin thickness T_fin fluctuation is negligible for the sufficiently small thickness of the sidewall spacer. Although the NiSi incorporation in the S/D reduces R_para on average, it causes additional fluctuation of R_para. Analyzing the correlation of the R_para fluctuation with the fluctuation in T_fin and the lateral growth of NiSi, the dominant origin of the R_para fluctuation is specified to be the NiSi/n⁺-Si contact resistance.

Keywords

MOSFET; contact resistance; semiconductor device measurement; FinFET; contact resistance; extension resistance fluctuation; fin thickness fluctuation; fin-shaped FET; measurement-based analysis; parasitic resistance; sidewall spacer; silicided source-drain; variability origins; Contact resistance; Correlation; FinFETs; Logic gates; Resistance; Silicon; Fin-shaped FET (FinFET); NiSi; parasitic resistance $(R_{rm para})$; scaling; source/drain (S/D); variability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2182755

Filename

6151016