DocumentCode :
1445334
Title :
\\hbox {GaAs/In}_{0.5}\\hbox {Ga}_{0.5}\\hbox {P} Laser Power Converter With Undercut Mesa for Simultaneous High-Speed Data Detection and DC Electrical Power Generation
Author :
Shi, Jin-Wei ; Tsai, Cheng-Yo ; Yang, Chan-Shan ; Kuo, Feng-Ming ; Hsin, Yue-Ming ; Bowers, J.E. ; Pan, Ci-Ling
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Volume :
33
Issue :
4
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
561
Lastpage :
563
Abstract :
We demonstrate novel GaAs/In0.5Ga0.5P high-speed laser power converters (LPCs), which not only can detect the envelope of incoming high-speed optical data but also can efficiently convert its optical dc component to dc electrical power. By utilizing the graded p-type GaAs and n-type In0.5Ga0.5P layers as photoabsorption (P) and collector (C) layers, respectively, the problem of slow-motion holes under 830-nm-optical-wavelength excitation and the conduction-band-offset-induced electron blocking effect between the P/C layers, which seriously limit the high-speed performance of LPC, can both be eliminated. Furthermore, by using the undercut mesa structure of the In0.5Ga0.5P C layer to further reduce the large junction capacitance under forward operation, we can achieve invariable high-speed performance (~9 GHz) from zero to near turn-on voltage (+0.8 V), which corresponds to the operation point of our LPC with the maximum power conversion efficiency (~15%).
Keywords :
DC power transmission; III-V semiconductors; gallium arsenide; gallium compounds; photodiodes; photoexcitation; power convertors; DC electrical power generation; GaAs-In0.5Ga0.5P; LPC; conduction band offset; electron blocking effect; laser power converter; optical data detection; optical wavelength excitation; photoabsorption; photocollector; undercut mesa structure; Bandwidth; Current measurement; Gallium arsenide; Optical pumping; Performance evaluation; Photoconductivity; Voltage measurement; Photodiodes (PDs); photovoltaic;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2181970
Filename :
6151018
Link To Document :
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