Vapor–Solid–Solid Growth of NiSi $_2$ Nanocrystals for Memory Application

NiSi₂ nanocrystals were synthesized by vapor-solid-solid process, introducing SiH₄ onto Ni catalyst dots on a SiO₂ substrate, for nonvolatile memory applications. Electron microscopy was used to characterize the morphology and X-ray photoelectron spectroscopy characterization confirmed the nature of these NiSi₂ nanocrystals. mosfet memory with NiSi₂ nanocrystal as floating gate was fabricated and fast programming/erasing speed, long retention, and 10⁵ times of operation endurance performances were demonstrated.