Title :
An indium phosphide MMIC amplifier for 180-205 GHz
Author :
Archer, J.W. ; Lai, R. ; Grundbacher, R. ; Barsky, M. ; Tsai, R. ; Reid, P.
Author_Institution :
CSIRO, Epping, NSW, Australia
Abstract :
This paper describes a high-performance indium phosphide (InP) monolithic microwave integrated circuit (MMIC) amplifier, which has been developed for application in radioastronomy and imaging-array receivers. Implemented using coplanar waveguide, the six-stage amplifier exhibits 15 db gain, 10 dB input and output return loss, and low noise figure over the 180-205 GHz frequency range. Only one design pass was needed to obtain excellent agreement between the predicted and measured characteristics of the circuit, a unique achievement in this frequency band. The circuit is also the first 180-205 GHz amplifier designed for and successfully fabricated using TRW´s standard 0.1-μm InP HEMT process.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; coplanar waveguides; field effect MIMIC; indium compounds; integrated circuit design; integrated circuit noise; microwave imaging; millimetre wave amplifiers; radioastronomy; 0.1 micron; 10 dB; 15 dB; 180 to 205 GHz; HEMT process; InP; MMIC amplifier; TRW; coplanar waveguide; design pass; imaging-array receivers; noise figure; radioastronomy; return loss; six-stage amplifier; Application specific integrated circuits; Coplanar waveguides; Frequency; Indium phosphide; Low-noise amplifiers; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Radiofrequency amplifiers;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/7260.905950
