High-isolation W-band MEMS switches

Author

Rizk, Jad ; Tan, Guan-Leng ; Muldavin, Jeremy B. ; Rebeiz, Gabriel M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

11

Issue

1

fYear

2001

Firstpage

10

Lastpage

12

Abstract

This paper presents the design, fabrication and measurement of single, T-match and /spl pi/-match W-band high-isolation MEMS shunt switches on silicon substrates. The single and T-match design result in -20 dB isolation over the 80-110 GHz range with an insertion loss of 0.25/spl plusmn/0.1 dB. The /spl pi/-match design results in a reflection coefficient lower than -20 dB up to 100 GHz, and an isolation of -30 to -40 dB from 75 to 110 GHz (limited by leakage through the substrate). The associated insertion loss Is 0.4/spl plusmn/0.1 dB at 90 GHz. To our knowledge, this is the first demonstration of high-performance MEMS switches at W-band frequencies.

Keywords

losses; micromechanical devices; microwave switches; millimetre wave devices; /spl pi/-match; 0.15 to 0.35 dB; 0.3 to 0.5 dB; 75 to 110 GHz; T-match; W-band; high-isolation MEMS shunt switches; insertion loss; isolation; reflection coefficient; substrate leakage; Bridge circuits; Capacitance; Coplanar waveguides; Inductance; Insertion loss; Micromechanical devices; Microswitches; Resonant frequency; Silicon; Switches;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/7260.905952

Filename

905952