Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

Author

Lanni, Luigia ; Ghandi, Reza ; Malm, Bengt Gunnar ; Zetterling, Carl-Mikael ; Östling, Mikael

Author_Institution

Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Stockholm, Sweden

Volume

59

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

1076

Lastpage

1083

Abstract

Operation up to 300 ^°C of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated. Stable noise margins of about 1 V are reported for a two-input or- nor gate operated on - 15 V supply voltage from 27 ^°C up to 300 ^°C. In the same temperature range, an oscillation frequency of about 2 MHz is also reported for a three-stage ring oscillator.

Keywords

bipolar logic circuits; bipolar transistor circuits; emitter-coupled logic; high-temperature electronics; low-power electronics; oscillators; silicon compounds; SiC; digital integrated circuits; emitter-coupled logic; high-temperature ECL-based bipolar integrated circuits; low-voltage 4H n-p-n bipolar transistor circuit; temperature 27 degC to 300 degC; three-stage ring oscillator; voltage 15 V; Integrated circuit modeling; Logic gates; Resistance; Resistors; Temperature measurement; Transistors; Bipolar junction transistor (BJT); emitter coupled logic (ECL); high-temperature integrated circuits (ICs); or –nor gate; silicon carbide (SiC);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2182514

Filename

6151087