Title :
Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC
Author :
Lanni, Luigia ; Ghandi, Reza ; Malm, Bengt Gunnar ; Zetterling, Carl-Mikael ; Östling, Mikael
Author_Institution :
Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Stockholm, Sweden
fDate :
4/1/2012 12:00:00 AM
Abstract :
Operation up to 300 °C of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated. Stable noise margins of about 1 V are reported for a two-input or- nor gate operated on - 15 V supply voltage from 27 °C up to 300 °C. In the same temperature range, an oscillation frequency of about 2 MHz is also reported for a three-stage ring oscillator.
Keywords :
bipolar logic circuits; bipolar transistor circuits; emitter-coupled logic; high-temperature electronics; low-power electronics; oscillators; silicon compounds; SiC; digital integrated circuits; emitter-coupled logic; high-temperature ECL-based bipolar integrated circuits; low-voltage 4H n-p-n bipolar transistor circuit; temperature 27 degC to 300 degC; three-stage ring oscillator; voltage 15 V; Integrated circuit modeling; Logic gates; Resistance; Resistors; Temperature measurement; Transistors; Bipolar junction transistor (BJT); emitter coupled logic (ECL); high-temperature integrated circuits (ICs); or –nor gate; silicon carbide (SiC);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2182514
