DocumentCode :
1445958
Title :
Compact Models for Memristors Based on Charge-Flux Constitutive Relationships
Author :
Shin, Sangho ; Kim, Kyungmin ; Kang, Sung-Mo
Author_Institution :
Sch. of Eng., Univ. of California, Merced, CA, USA
Volume :
29
Issue :
4
fYear :
2010
fDate :
4/1/2010 12:00:00 AM
Firstpage :
590
Lastpage :
598
Abstract :
This paper introduces compact models for memristors. The models are developed based on the fundamental constitutive relationships between charge and flux of memristors. The modeling process, with a few simple steps, is introduced. For memristors with limited resistance ranges, a simple method to find their constitutive relationships is discussed, and examples of compact models are shown for both current-controlled and voltage-controlled memristors. Our models satisfy all of the memristor properties such as frequency dependent hysteresis behaviors and also unique boundary assurance to simulate memristors whether they behave memristively or resistively. Our models are implementable in circuit simulators, including SPICE, Verilog-A, and Spectre.
Keywords :
circuit simulation; hysteresis; memristors; SPICE; Spectre; Verilog-A; charge-flux constitutive relationships; circuit simulators; compact models; current-controlled memristors; frequency dependent hysteresis; memristors; voltage-controlled memristors; Circuit simulation; Equations; Frequency dependence; Hardware design languages; Hysteresis; Memristors; Nonvolatile memory; SPICE; Semiconductor process modeling; Voltage; Constitutive relationship; macromodel; memductor; memristor; sPICE; spectre; verilog-A;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2010.2042891
Filename :
5433745
Link To Document :
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