Title :
Comparison of GaN p-i-n and Schottky rectifier performance
Author :
Zhan, A.P. ; Dang, G.T. ; Fan Ren ; Hyun Cho ; Kyu-Pil Lee ; Pearton, S.J. ; Jenn-Inn Chyi ; Nee, T.-Y. ; Chuo, C.-C.
Author_Institution :
Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA
fDate :
3/1/2001 12:00:00 AM
Abstract :
The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (~5 V for the p-i-n diodes; ~3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34±0.05 V·K-1
Keywords :
III-V semiconductors; Schottky diodes; gallium compounds; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; solid-state rectifiers; wide band gap semiconductors; 3.5 V; 347 V; 490 V; 5 V; GaN; I-V characteristics; Schottky diodes; Schottky rectifiers; device size dependence; forward turn-on voltage; negative temperature coefficient; operating temperature dependence; p-i-n diodes; p-i-n rectifiers; performance comparison; power electronics; reverse breakdown voltage; Dry etching; Gallium nitride; P-i-n diodes; PIN photodiodes; Photonic band gap; Rectifiers; Schottky diodes; Silicon carbide; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
