Title :
Laterally coupled strained MQW ridge waveguide distributed-feedback laser diode fabricated by wet-dry hybrid etching process
Author :
Watanabe, Yoshiaki ; Chen, Nong ; Takei, Kiyoshi ; Chijuma, K. ; Futakuchi, Naoki ; Nakano, Yoshiaki
Author_Institution :
Corp. Res. & Dev. Lab., Pioneer Electron. Corp., Saitama, Japan
Abstract :
The fabrication and the characteristics of the laterally coupled GaInAsP-InP quantum-well ridge waveguide distributed-feedback (DFB) lasers are presented. The electron beam (EB) lithography and the wet and dry hybrid etching technique have been used to fabricate the deep grating structures for the DFB lasers on and beside the sidewalls of the narrow ridge waveguide. The threshold current was 18.5 mA at 20/spl deg/C, and the sidemode suppression ratios (SMSRs) were ensured to be more than 40 dB for as-cleaved devices with various cavity lengths. The continuous-wave output powers of over 15 mW/facet have been observed, while transverse and longitudinal modes have remained in single mode at this output level.
Keywords :
III-V semiconductors; distributed feedback lasers; electron beam lithography; etching; gallium arsenide; indium compounds; laser modes; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 18.5 mA; 20 C; DFB laser; GaInAsP-InP; as-cleaved devices; cavity lengths; deep grating structures; electron beam lithography; laser fabrication; laterally coupled GaInAsP-InP quantum-well ridge waveguide distributed-feedback lasers; laterally coupled strained MQW ridge waveguide distributed-feedback laser; longitudinal modes; narrow ridge waveguide; output level; sidemode suppression ratios; single mode; threshold current; transverse modes; wet-dry hybrid etching process; Dry etching; Electron beams; Gratings; Lithography; Optical coupling; Optical device fabrication; Quantum well devices; Quantum well lasers; Waveguide lasers; Wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
