Title :
Minority electron transport anisotropy in p-type AlxGa 1-xN/GaN superlattices
Author :
Chernyak, Leonid ; Osinsky, Andrei ; Fuflyigin, Vladimir N. ; Graff, John W. ; Schubert, E.Fred
Author_Institution :
Dept. of Phys., Univ. of Central Florida, Orlando, FL, USA
fDate :
3/1/2001 12:00:00 AM
Abstract :
The minority electron diffusion length, L, in Mg-doped molecular beam epitaxy (MBE) grown p-type AlxGa1-xN/GaN superlattices with aluminum content x=0.1 and 0.2 was measured perpendicular and parallel to the superlattice planes by the electron beam induced current technique. A large anisotropy in the transport properties was observed with the effect varying from 1:3 to 1:6. We attribute an experimentally observed diffusion length anisotropy to minority electron scattering during transport across the potential barriers of the superlattice. Reference p-GaN samples were also investigated, and the diffusion length was observed to be isotropic in both MOCVD (L=0.5 μm) and MBE (L=0.27 μm) grown samples
Keywords :
EBIC; Hall mobility; III-V semiconductors; aluminium compounds; carrier lifetime; deep levels; gallium compounds; heterojunction bipolar transistors; microwave bipolar transistors; minority carriers; semiconductor superlattices; wide band gap semiconductors; AlGaN-GaN; EBIC; GaN:Mg; Hall effect; Mg-doped MBE grown superlattices; SEM; Schottky barrier distance; deep traps; minority electron diffusion length; minority electron scattering; minority electron transport anisotropy; p-type AlxGa1-xN/GaN superlattices; potential barriers; Aluminum; Anisotropic magnetoresistance; Current measurement; Electron beams; Gallium nitride; Length measurement; MOCVD; Molecular beam epitaxial growth; Scattering; Superlattices;
Journal_Title :
Electron Devices, IEEE Transactions on
