High-quality oxide/nitride/oxide gate insulator for GaN MIS structures

Author

Gaffey, B. ; Guido, Louis J. ; Wang, X.W. ; Ma, T.P.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

Volume

48

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

458

Lastpage

464

Abstract

We report on a SiO₂/Si₃N₄/SiO₂ (ONO) gate insulator stack deposited on GaN by jet vapor deposition (JVD) technique. Capacitors fabricated using the JVD-ONO on GaN are characterized from room temperature to 450°C using capacitance-voltage (C-V), current-voltage (I-V), AC conductance, and constant-current stress measurements. We find excellent operating characteristics over the measured range, most notably: (1) very low leakage current, (2) extremely high hard-breakdown strength, (3) low interface-trap density, and (4) low net dielectric-charge density. Moreover these performance figures remain well within acceptable limits even for operating temperatures as high as 150°C. In addition, we measure both the capture cross-section of the interface traps and the surface-potential fluctuation at the GaN/ONO interface. All results suggest that JVD-ONO is an excellent choice for a gate dielectric in GaN-based MISFETs

Keywords

III-V semiconductors; MIS capacitors; MIS structures; MISFET; dielectric thin films; high-temperature electronics; interface states; leakage currents; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; semiconductor-insulator boundaries; silicon compounds; surface potential; vapour deposited coatings; vapour deposition; wide band gap semiconductors; 20 to 450 C; AC conductance measurements; C-V measurements; GaN MIS structures; GaN-SiO₂-Si₃N₄-SiO₂; GaN-based MISFETs; GaN/ONO interface; I-V measurements; MIS capacitors; SiO₂-Si₃N₄-SiO₂ ONO gate insulator stack; capacitance-voltage measurements; capture cross-section; constant-current stress measurements; current-voltage measurements; high hard-breakdown strength; high-quality ONO gate insulator; interface traps; jet vapor deposition technique; low interface-trap density; low leakage current; low net dielectric-charge density; operating characteristics; oxide/nitride/oxide gate insulator; surface-potential fluctuation; Capacitance-voltage characteristics; Capacitors; Chemical vapor deposition; Current measurement; Density measurement; Dielectric measurements; Gallium nitride; Insulation; Stress measurement; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.906436

Filename

906436