Trapping effects and microwave power performance in AlGaN/GaN HEMTs

Author

Binari, Steven C. ; Ikossi, Kiki ; Roussos, Jason A. ; Kruppa, Walter ; Park, Doewon ; Dietrich, Harry B. ; Koleske, Daniel D. ; Wickenden, Alma E. ; Henry, Richard L.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

48

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

465

Lastpage

471

Abstract

The dc small-signal, and microwave power output characteristics of AlGaN/GaN HEMTs are presented. A maximum drain current greater than 1 A/mm and a gate-drain breakdown voltage over 80 V have been attained. For a 0.4 μm gate length, an f_T of 30 GHz and an f_max of 70 GHz have been demonstrated. Trapping effects, attributed to surface and buffer layers, and their relationship to microwave power performance are discussed. It is demonstrated that gate lag is related to surface trapping and drain current collapse is associated with the properties of the GaN buffer layer. Through a reduction of these trapping effects, a CW power density of 3.3 W/mm and a pulsed power density of 6.7 W/mm have been achieved at 3.8 GHz

Keywords

III-V semiconductors; aluminium compounds; electron traps; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device breakdown; 0.4 micron; 3.8 GHz; 30 GHz; 70 GHz; AlGaN-GaN; CW power density; HEMTs; III-V semiconductors; buffer layers; dc small-signal characteristics; drain current collapse; gate lag; gate length; gate-drain breakdown voltage; maximum drain current; microwave power performance; pulsed power density; surface layers; surface trapping; trapping effects; Aluminum gallium nitride; Buffer layers; Doping; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Microwave devices; Microwave transistors; Sheet materials;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.906437

Filename

906437