Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

Author

Shelton, Bryan S. ; Lambert, Damien J H ; Huang, Jian Jang ; Wong, Michael M. ; Chowdhury, Uttiya ; Zhu, Ting Gang ; Kwon, H.K. ; Liliental-Weber, Z. ; Benarama, M. ; Feng, Milton ; Dupuis, Russell D.

Author_Institution

Emcore Corp., Somerset, NJ, USA

Volume

48

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

490

Lastpage

494

Abstract

The selective area growth (SAG) and properties of AlGaN/GaN heterojunction bipolar transistors (HBTs) grown by low-pressure metalorganic chemical vapor deposition (MOCVD) are described and analyzed. Transistors based on group III-nitride material are attractive for high-power and high-temperature applications. Much work has been focused on improving p-type material, as well as heterojunction interfaces. However, there have been very few reports on HBTs operating at room temperature, At this time, current gains for nitride-based HBTs have been limited to ~10. Selective area regrowth was applied to the growth of AlGaN/GaN HBTs to analyze its potential advantages as compared to more traditional growth techniques in order to realize improved electrical performance of the devices

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; heterojunction bipolar transistors; high-temperature electronics; power bipolar transistors; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; AlGaN-GaN; III-V semiconductors; current gains; electrical performance; heterojunction bipolar transistors; heterojunction interfaces; high-power applications; high-temperature applications; metalorganic chemical vapor deposition; selective area growth; Aluminum gallium nitride; Chemical analysis; Chemical vapor deposition; Etching; FETs; Gallium nitride; Heterojunction bipolar transistors; Laboratories; MOCVD; Microelectronics;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.906441

Filename

906441