Title :
Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors
Author :
Rumyantsev, Serguei L. ; Pala, Nezih ; Shur, Michael S. ; Borovitskaya, Elena ; Dmitriev, Alexander P. ; Levinshtein, Michael E. ; Gaska, Remis ; Khan, M.A. ; Yang, Jinwei ; Hu, Xuhong ; Simin, Grigory
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
3/1/2001 12:00:00 AM
Abstract :
Local levels with a large activation energy Ea~0.8-1.0 eV have been observed in low-frequency noise measurements of GaN/AlGaN heterostructure field effect transistors (HFETs and MOS-HFETs) grown on 4N-SiC substrates. The noise might come from the thin (30 nm) AlGaN barrier layer. The estimates of the level parameters based on this assumption resulted in reasonable values of capture cross section σn≈(10-12-10-13) cm2 and trap concentration Nt≈5-1016 cm-3
Keywords :
1/f noise; III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; semiconductor device measurement; semiconductor device noise; wide band gap semiconductors; 30 nm; 4N-SiC substrates; GR noise; GaN-AlGaN; GaN/AlGaN HFET; LF noise measurements; SiC; activation energy; capture cross section; g-r noise study; generation-recombination noise; heterostructure FETs; heterostructure field effect transistors; local levels; low-frequency noise; thin AlGaN barrier layer; trap concentration; Acoustical engineering; Aluminum gallium nitride; Computer aided manufacturing; Gallium nitride; HEMTs; Low-frequency noise; MODFETs; Noise generators; Noise level; Silicon carbide;
Journal_Title :
Electron Devices, IEEE Transactions on
