Title :
Temperature dependent transport properties in GaN, AlxGa 1-xN, and InxGa1-xN semiconductors
Author :
Anwar, A.F.M. ; Wu, Shangli ; Webster, Richard T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Connecticut Univ., Storrs, CT, USA
fDate :
3/1/2001 12:00:00 AM
Abstract :
Ensemble Monte Carlo simulation is used to determine the electron saturation velocity and low-field mobility for AlxGa1-x N and InxGa1-xN. Acoustic phonon, optical phonon, intervalley, ionized impurity, alloy, and piezoelectric scattering are included in the simulation. Doping concentration ranging from 1017 cm-3 to 1019 cm-3 is considered in the temperature range from 50 K to 500 K, Theoretical calculation shows excellent agreement with low-field mobility experimental data. Empirical expressions for low field mobility and saturation velocity are provided as functions of temperature, doping concentration and mole fraction
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; digital simulation; electron mobility; electron-phonon interactions; gallium compounds; impurity scattering; indium compounds; piezoelectricity; 50 to 500 K; AlxGa1-xN; AlGaN; GaN; InxGa1-xN; InGaN; acoustic phonon scattering; alloy scattering; composition dependence; doping concentration dependence; electron low-field mobility; electron saturation velocity; ensemble Monte Carlo simulation; intervalley scattering; ionized impurity scattering; optical phonon scattering; piezoelectric scattering; semiconductors; temperature dependent transport properties; Aluminum alloys; Doping; Electron mobility; Electron optics; Gallium nitride; Impurities; Optical saturation; Optical scattering; Phonons; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
