Title :
Resonant cavity longwave SiGe-Si photodetector using a buried silicide mirror
Author :
Carline, R.T. ; Nayar, V. ; Robbins, D.J. ; Stanaway, M.B.
Author_Institution :
Defence Res. Agency, UK
Abstract :
We describe a resonant cavity detector which uses epitaxial p-type SiGe-Si quantum wells for absorption which are epitaxially grown above a high reflectance tungsten silicide layer. The device operates in the 8-12 μm band in normal incidence and exhibits a ×8 enhancement in its peak photoresponse when compared to a nonresonant control device. The black body responsivity is comparable to current n-GaAs-AlGaAs detectors at 1 V making it suitable for integration in a monolithic Si-based focal plane array. Ways to optimize the device design to achieve improved performance are discussed.
Keywords :
Ge-Si alloys; infrared detectors; integrated optoelectronics; mirrors; optical design techniques; optical resonators; optimisation; photodetectors; reflectivity; semiconductor quantum wells; silicon; 8 to 12 mum; SiGe-Si; WSi; black body responsivity; buried silicide mirror; device design optimisation; epitaxial p-type SiGe-Si quantum wells; epitaxially grown; high reflectance tungsten silicide layer; monolithic Si-based focal plane array; n-GaAs-AlGaAs detectors; normal incidence; peak photoresponse; resonant cavity longwave SiGe-Si photodetector; Electromagnetic wave absorption; Infrared detectors; Mirrors; Optical arrays; Optical crosstalk; Photodetectors; Resonance; Sensor arrays; Silicides; Wafer bonding;
Journal_Title :
Photonics Technology Letters, IEEE
