Title :
InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 μm
Author :
Seassal, C. ; Rojo-Romeo, P. ; Letartre, X. ; Viktorovitch, P. ; Hollinger, G. ; Jalaguier, E. ; Pocas, S. ; Aspar, B.
Author_Institution :
Lab. d´´Electron., Optoelectron. et Microsyst., Ecole Centrale de Lyon, Ecully, France
fDate :
2/15/2001 12:00:00 AM
Abstract :
Microdisk lasers are fabricated in an InP:InGaAs MQW heterostructure transferred onto silicon. The CW room temperature laser operation of such devices at 1.6 μm is reported
Keywords :
III-V semiconductors; indium compounds; microdisc lasers; quantum well lasers; 1.6 micron; CW room temperature operation; InP microdisk laser; InP-InGaAs; InP/InGaAs MQW heterostructure; Si; silicon wafer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010173
