• DocumentCode
    1446402
  • Title

    InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 μm

  • Author

    Seassal, C. ; Rojo-Romeo, P. ; Letartre, X. ; Viktorovitch, P. ; Hollinger, G. ; Jalaguier, E. ; Pocas, S. ; Aspar, B.

  • Author_Institution
    Lab. d´´Electron., Optoelectron. et Microsyst., Ecole Centrale de Lyon, Ecully, France
  • Volume
    37
  • Issue
    4
  • fYear
    2001
  • fDate
    2/15/2001 12:00:00 AM
  • Firstpage
    222
  • Lastpage
    223
  • Abstract
    Microdisk lasers are fabricated in an InP:InGaAs MQW heterostructure transferred onto silicon. The CW room temperature laser operation of such devices at 1.6 μm is reported
  • Keywords
    III-V semiconductors; indium compounds; microdisc lasers; quantum well lasers; 1.6 micron; CW room temperature operation; InP microdisk laser; InP-InGaAs; InP/InGaAs MQW heterostructure; Si; silicon wafer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010173
  • Filename
    907532
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1446402