Title :
Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1 mW
Author :
Kageyama, T. ; Miyamoto, T. ; Makino, S. ; Ikenaga, Y. ; Nishiyama, N. ; Matsutani, A. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
fDate :
2/15/2001 12:00:00 AM
Abstract :
The authors present a near 1200 nm wavelength vertical-cavity surface-emitting laser (VCSEL) the active region of which is formed by GaInNAs/GaAs quantum wells grown by chemical beam epitaxy. Room temperature continuous-wave operation has been demonstrated with a high slope efficiency of 0.23 W/A, a high output power of over 1.0 mW, and a singlemode output power of 0.34 mW. The fabricated devices with different aperture sizes show low threshold currents of 1.2-2.1 mA and a record low threshold current density of 2.6 kA/cm2 in GaInNAs VCSELs
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; quantum well lasers; surface emitting lasers; 1 mW; 1200 nm; GaInNAs-GaAs; GaInNAs/GaAs quantum well; aperture size; chemical beam epitaxy; output power; room temperature continuous wave operation; single-mode output power; slope efficiency; threshold current; threshold current density; vertical cavity surface emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010179
