Title :
Size- and temperature-independent zero-offset current-voltage characteristics of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors
Author :
Mochizuki, K. ; Oka, T. ; Ohbu, I.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
2/15/2001 12:00:00 AM
Abstract :
The collector-emitter offset voltage of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors (C-up TC-HBTs) was found to be almost zero (10-14 mV) and independent of transistor size and temperature. These findings indicate that GaInP/GaAs C-up TC-HBTs are strong candidates For high-efficiency high-power amplifiers
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power amplifiers; microwave power transistors; power bipolar transistors; tunnelling; 10 to 14 mV; GaInP-GaAs; collector-emitter offset voltage; collector-up tunnelling-collector HBT; fabrication; high-efficiency high-power amplifiers; size-independent; temperature-independent; zero-offset current-voltage characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010154
