Title :
Textured and smooth AlN films prepared by Helicon sputtering system [for SAW device applications]
Author :
Wu, C.H. ; Chiu, W.Y. ; Kao, H.L.
Author_Institution :
Dept. of Electron. Eng., Chung Yuan Christian Univ., Chung Li, Taiwan
fDate :
2/15/2001 12:00:00 AM
Abstract :
Highly-textured AlN films were obtained by using a Helicon sputtering system. This sputtering method was able to sustain the plasma in a gas atmosphere of 10-4 Torr, and, in turn, to improve the surface morphology of the film. The AlN film exhibits an extremely smooth surface with a root mean square roughness of only 3.7 Å
Keywords :
aluminium compounds; piezoelectric semiconductors; piezoelectric thin films; semiconductor thin films; sputter deposition; surface acoustic wave devices; surface texture; surface topography; wide band gap semiconductors; 1E-4 torr; AlN; Helicon sputtering system; SAW device material; extremely smooth surface; highly-textured films; root mean square roughness; smooth film preparation; surface morphology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010124
